研究方向
宽禁带半导体的材料生长与纳米器件制备
教育背景
博士微电子与固体电子学，2004年9月至2010年7月，西安电子科技大学
访问学生材料科学与技术，2008年10月至2010年2月，美国佐治亚理工
学士光信息科学与技术专业，2000年9月至2004年7月，西安电子科技大学
奖励荣誉
2007 教育部高等学校科学技术进步二等奖（第10完成人）
科研经历
2008～2010 博士课题，佐治亚理工大学，纳米压电子学的基础问题研究，主要是压电势的开关效应，ZnO纳米线的电应力下的机械性能等；
2005～2008 博士课题， 西安电子科技大学， GaN异质外延材料微结构与新效应研究，主要是微结构与其对应光、电性质的研究，极性在GaN腐蚀过程中的重要作用以及横向生长效应；
2002～2003 红外技术实验室研究助手，西安电子科技大学， 红外图象的识别与处理，主要负责软件程序编写及其与硬件接口问题。
主要参与的科研项目
¨负责国家自然科学基金青年基金“MOCVD异质外延GaN过程中横向生长效应的研究”；
¨负责北京市自然科学基金面上项目“智能应答式自发电ZnO纳米线阵列紫外探测系统”；
¨参与973项目“双色焦平面红外探测器阵列”，负责其中器件制备工艺；
¨参与国家自然科学基金重点基金项目“GaN宽禁带微电子材料和器件重大基础问题研究”，负责其中生长机理的理论研究；
¨参与863项目新材料领域项目“GaN基深紫外LED材料的外延技术”，负责其中材料的表征测试与结构优化；
¨参与863项目新材料领域项目“GaN-MOCVD深紫外LED材料生长设备”，负责其中材料的表征测试与结构优化；
¨参与西安应用材料创新基金项目“AlInGaN/GaN HFET结构设计与生长”，负责其中高质量GaN缓冲层生长技术研究。
专利
1.高志远，孙丽媛，邹德恕，张露，吴文荣.多台阶器件结构底层表面的光刻方法。中华人民共和国国家知识产权局发明专利.专利号：ZL 201210188616.7，授权日：2012-6-8。
2.高志远，郝跃，张进成，李培咸.GaN单晶缺陷种类和密度的检测方法.中华人民共和国国家知识产权局发明专利.专利号：ZL200610042911.6，授权日：2009-1-14。
3.郝跃，高志远，张进成，李培咸. GaN多层量子点发光材料的制作方法. 中华人民共和国国家知识产权局发明专利.专利号：ZL 200810150272.4，授权日：2010-1-27。
4.高志远，孙丽媛，邹德恕，张露，吴文荣. 多台阶器件结构底层表面的光刻方法. 中华人民共和国国家知识产权局发明专利.专利号：ZL201210188616.7，授权日：2012-6-8。
文章
1.ZhiyuanGao, Xiaowei Xue, et, al. Understanding of surface pit formation mechanism of GaN grown in MOCVDbased on local thermodynamic equilibrium assumption, Chinese Physics B, Vol. 25, pp. 066105, 2016.
2.ZhiyuanGao, Xiaowei Xue, et, al. Influence of lateral growth on the surfacepit formation of GaN heteroepitaxial film grown by MOCVD, Materials Science, Vol. 22, pp.223-227, 2016.
3.李江江，高志远*等，片上制备横向结构ZnO纳米线阵列紫外探测器件，物理学报， Vol.65, pp.118104,2016. Cited 1.
4.ZhiyuanGao, Jiangjiang Li, et, al. The same formationmechanism of surface pits for both a- and c-plane GaN, 2ndAnnual International Conference on Advanced Material Engineering, Wuhan, China, 2016.04.15-17.
5.ZhiyuanGao, Jiangjiang Li, Xiaowei Xue, Bifeng Cui, Yanhui Xing, and DeshuZou. Different structural origins for different sized surface pits observed ona-plane GaN film. Science China:Technological Sciences, Vol. 58, pp. 1~6, 2015.
6.Li Ma,Guangdi Shen, Zhiyuan Gao, Chen Xu. Enhanced performances ofAlGaInP-based light-emitting diodes withSchottky current blocking layers. ChinesePhysics B, 24(9), pp. 097202, 2015.
7.Li Ma,Guangdi Shen, Jiangpeng Liu, Zhiyuan Gao, Chen Xu, Xun Wang. Theoreticaland experimental analysis of the effects of the series resistance on luminousefficacy in GaN-based light emitting diodes. Chinese Physics B, 23(11), pp. 118507, 2014.
8.马莉，沈光地，陈依新，蒋文静，郭伟玲，徐晨，高志远, 新型AlGaInP系发光二极管饱和特性与寿命的研究, 物理学报, 63(3), 037201, 2014.
9.田亮，高志远，孙丽媛，邹德恕，铟锡氧化物扩展层对LED抗静电及漏电性能的影响，光电子激光, 24(12),2289-2294, 2013.
10.Xizhu Zhang, Jinshu Wang, Yiman Wang,Wei Liu, Meiling Zhou, Zhiyuan Gao. Investigation of influence ofsurface nanoparticle on emission properties of Scandia-doped dispensercathodes. Functional Mterial Letters, 6(4),pp. 1350040, 2013. Cited 1.
11.孙丽媛，高志远，邹德恕，张露，马莉，田亮，沈光地，多台阶器件结构深层表面光刻工艺优化，物理学报,61（20）,206801,2012.
12.孙丽媛，高志远，张露，马莉，吴文蓉，邹德恕，GaAs材料ICP刻蚀中光刻胶厚度及刻蚀条件对侧壁倾斜度的影响, 功能材料与器件学报,18（4）,283-290,2012.
13.Zhiwei Bi, Yue Hao, Feng Qian, Zhiyuan Gao, Jincheng Zhang, Wei Mao,Kai Zhang, Xiaohua Ma, Hongxia Liu, Linan Yang, Nan Mei, Yongming Chang. AlGaN/GaNMetal-Insulator-Semiconductor High Electron-Mobility Transistor Using aNbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition. Chinese PhysicsLetters, 29(2), 2012. SCI000300619100061, cited 2.
14.Yixin Chen, Guangdi Shen, Weiling Guo,Zhiyuan Gao. AlGaInP-Si glue bonded high performance LED. Chin. Phys. B 20, 087203, 2011, SCI 000294810700053.
15.Yixin Chen, Guangdi Shen, Zhiyuan Gao,Weiling Guo, Guangchen Zhang, Yun Han, and Yanxu Zhu. Relationship betweenlight efficiency and junction temperature of high power AlGaInP LED. Acta Phys. Sin. 60, 087206, 2011. (InChinese) SCI
16.ZhiweiBi, Zhenhua Hu, Wei Mao, Yue Hao, Qian Feng, Yanrong Cao, Zhiyuan Gao,Jincheng Zhang, Xiaohua Ma, Yongming Chang, Zhiming Li, and Nan Mei. Investigationof passivation effects in AlGaN/GaN metal insulator semiconductor highelectron-mobility transistor by gate drain conductance dispersion study. Chin. Phys. B. 20, 087307, 2011. SCI000294810700060. Cited 2.
17.Chite Huang, Jinhui Song, Weifan Lee, YongDing, Zhiyuan Gao, Yue Hao, LihJuann Chen, and Zhonglin Wang. GaNnanowire arrays for high output nanogenerators.J. Am. Chem. Soc. 132, 4766-4771, 2010, SCI 000276553600059,Cited 149.
18.Chi-Te Huang, Jinhui Song, Chung-Min Tsai,Wei-Fan Lee, Der-Hsien Lien, Zhiyuan Gao, Yue Hao, Lih-Juann Chen, andZhong lin Wang, Single InN nanowire nanogenerator with upto 1V output voltage. Advanced Materials, 2010, SCI000283104600007,Cited 90.
19.ZhiyuanGao, Yong Ding, Shisheng Lin, Yue Hao and Zhonglin Wang. Dynamicfatigue studies of ZnO nanowires by the in-situ transmission electronmicroscopy. Phys. Status Solidi RRL,Vol. 3, pp. 260~262, 2009, SCI000271552200018, Cited 7.
20.ZhiyuanGao, Jun Zhou, Yudong Gu, Peng Fei, Yue Hao, Gang Bao, and Zhonglin Wang. Effectsof Piezoelectric Potential on the Transport Characteristics of Metal-ZnONanowire-Metal Field Effect Transistor. Journalof Applied Physics, Vol. 105, pp. 113707, 2009, SCI 000267053200073, Cited25.
21.Zhiyuan Gao, Yue Hao, Peixian Li, and JinfengZhang. Role of lateral growthon the structural properties of high temperature GaN layer. Sci China Ser E-Tech Sci, Vol.52, No.5, pp. 1242~1247, 2009, SCI 000265960500016, Cited3.
22.Zhiyuan Gao, Yue Hao, Jincheng Zhang, Peixian Li,and Wenping Gu. Influence ofdislocations in GaN layer on the electrical properties of AlGaN/GaNheterostructure. Chinese Physics B, Vol.18, pp. 4970-4975, 2009, SCI000271631200059, Cited 3.
23.Zhiyuan Gao, Yue Hao, and Jinfeng Zhang. Effectof Structural Defects in GaN Epitaxial Layer on Its Surface Morphology. Materials Review, Vol. 23, No.2, pp.1~5, 2009. (In Chinese)
24.Zhiyuan Gao, Jun Zhou, Yudong Gu, Peng Fei, YueHao, Gang Bao, and Zhonglin Wang.Piezopotential governed electronic transport of ZnO nanowire based transistors.The 3rd InternationalConference on One-dimensional nanomaterials, pp. P27, 2009.
25.Yi Xi, Jinhui Song, Sheng Xu, Rusen Yang, ZhiyuanGao, Chenguo Hu, and Zhonglin Wang. Growth of ZnO nanotube arrays andnanotube based piezoelectric nanogenerator. J. Mater. Chem., Vol. 19,pp. 9260~9264, 2009, SCI 000272271500020, Cited 25.
26.Fan Long, Yue Hao, Yuanfu Zhao, JinchengZhang, Zhiyuan Gao, and Peixian Pu. Degraded model of radiation-inducedacceptor defects for GaN-based high electron mobility transistors (HEMTs).Chinese Physics B, Vol. 18, pp. 2912-2919, 2009, SCI 000267821200049, Cited2.
27.Lin Lu, ZhiyuanGao, Bo Shen, F. J. Xu, Z. L. Miao, Yue Hao, Z. J. Zhang, G. Y. Zhang, X.P. Zhang, J. Xu, and D. P. Yu. Microstructure and origin of dislocation etchpits in GaN epilayers grown by MOCVD. Journalof Applied Physics, Vol. 104, pp. 123525, 2008, SCI 000262225100044,Cited 10.
28.Zhiyuan Gao, YueHao, Peixian Li, Peixian Li, and Jincheng Zhang. Influence of lateral growth onthe optical properties of GaN epitaxial layers. The 8th International Conference on Numerical Simulation ofOptoelectronic Devices, pp. 41~42, 2008, SCI000262358000021.
29.Zhiyuan Gao, Yue Hao, Peixian Li, and JinchengZhang. Influence of threadingdislocations on the luminescence efficiency of GaN heteroepitaxial layer. Chinesejournal of semiconductors, Vol.29,No.3, pp.179~183, 2008, EI 20081611206624, Cited 1. (In Chinese)
30.Zhiyuan Gao, Huantao Duan, Yue Hao, Peixian Li, and Jinfeng Zhang.Formation and optical properties of the large V-shaped surface pits in GaN thinfilm. Chinese journal of material research, Vol. 22, No. 6, pp.657~663, 2008, EI 20090411872876, Cited 1.
31.Zhiyuan Gao, Yue Hao, Jincheng Zhang, JinfengZhang,and Jinyu Ni. Reliableevaluation of dislocation densities in GaN epilayers by molten KOH etching. Journal of functional materials and devices,Vol. 14, No. 4, pp. 742~750, 2008, Cited6.
32.Zhiyuan Gao, Yue Hao, Jincheng Zhang, JinfengZhang, Haifeng Chen, and Jinyu Ni. Observation of dislocation etch pits in GaNby atomic force and scanning electron microscopy. Chinese journal of semiconductors, Vol.28, No.4, pp.473~479, 2007, EI20072310642353, Cited 2.
33.Zhiyuan Gao, Yue Hao, Jincheng Zhang, JinfengZhang, Haifeng Chen, and Jinyu Ni. Polarity results in different etch pitshapes of screw and edge dislocations in GaN epilayers. Electron Devices and Semiconductor Technology, Proceedingof 2007 International Workshop on 3-4 June 2007, pp. 125~128, 2007, SCI000250973000028.
34.Zhiyuan Gao, Jincheng Zhang, Yue Hao, and Jinyu Ni.Investigation of MOCVD growth mechanism of GaN-based material by wet etching. The 10th National MOCVD AcademicConference of China, pp.275~278, 2007. (In Chinese)
35.Haifeng Chen, Yue Hao, Xiaohua Ma, YanrongCao, Zhiyuan Gao and Xin Gong, Comparisonof hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxideunder an alternating stress，Chinese Physics, Vol.16(10), pp. 3114-3119, 2007,SCI 000250140900049, EI 20075010969132.
36.Jinyu Ni, Jincheng Zhang, Yue Hao, Yang Yan,Haifeng Chen, Zhiyuan Gao,Comparison of measuring methods of sheet carrier density in AlGaN/GaNheterostructures, ACTA Physica sinica, Vol. 56(11), pp. 6629-6633, 2007, SCI 000251093800077, Cited 1. (In Chinese)
E-mail: zygao@bjut.edu.cn
通信地址：北京平乐园100号北京工业大学电子信息与控制工程学院 100124
