一、 个人简介

冯玉霞，副教授，硕士研究生导师。

主要从事宽禁带半导体氮化镓（GaN）外延生长及其电子器件研究，以项目负责人主持国家自然科学基金面上项目、青年项目、中国博士后科学基金等科研项目。发表SCI论文20余篇，申请国家发明专利16项。

二、 教育工作经历

2022.10 -至今，北京工业大学，信息学部微电子，副教授

2019.07-2022.09，北京工业大学，信息学部微电子，讲师

2015.07-2019.06，北京大学，物理学院，博士后

2010.09-2015.06，中科院半导体所，博士

2006.09-2010.07，河北工业大学，学士

三、研究方向

GaN基功率器件研制与器件物理研究；

GaN基宽禁带半导体外延生长研究。

四、代表性论文

1. Yuxia Feng, Xuelin Yang*, Zhihong Zhang, Duan Kang, Jie Zhang, Kaihui Liu*, Xinzheng Li, Jianfei Shen, Fang Liu, Tao Wang, Panfeng Ji, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Dapeng Yu, Weikun Ge, and Bo Shen*, Epitaxy of single-crystalline GaN film on CMOS-compatible Si (100) substrate buffered by graphene, Advanced Functional Materials, 29, 1905056, 2019.

2. Yuxia Feng, Huarui Sun, Xuelin Yang*, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, and Bo Shen*, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer, Applied Physics Letters, 118, 052104, 2021.

3. Yuxia Feng, Xueling Yang*, Zhihong Zhang, Jie Zhang, Jiaqi Wei, Lixing Zhou, Kaihui Liu, Fujun Xu, Weikun Ge, and Bo Shen*, Epitaxial growth mechnisms of single-crystalline GaN on single-crystalline graphene, CrystEngComm, 23, 5451, 2021.

4. Xiaoguang He^✝, Yuxia Feng^✝, Xuelin Yang*, Shan Wu, Zidong Cai, Jia Wei, Jianfei Shen, Huayang Huang, Danshuo Liu, Zheng Hao Chen, Cheng Ma, Weikun Ge, and Bo Shen*, Step-graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation, Applied Physics Express, 15, 011001, 2022.

5. Yuxia Feng, Xuelin Yang*, Jianpeng Cheng, Jie Zhang, Panfeng Ji, Jianfei Shen, Anqi Hu, Fujun Xu, Tongjun Yu, Xinqiang Wang, and Bo Shen*, Anisotropic strain relaxation and high quality AlGaN.GaN heterostructures on Si (110) substrates, Applied Physics Letters, 110, 192104, 2017.

6. Yuxia Feng, Hongyuan Wei*, Shaoyang Yang*, Zhen Chen, Lianshan Wang, Susu Kong, Guijuan Zhao, and Xianglin Liu, Competitive growth mechanisms of AlN on Si (111) by MOVPE, Scientific Reports, 4, 6416, 2014.

7. Yuxia Feng, Hongyuan Wei, Shaoyan Yang*, Heng Zhang, Susu Kong, Guijuan Zhao, and Xianglin Liu, Significant quality improvement of GaN on Si (111) upon formation of an AlN defective layer, CrystEngComm, 16, 7525, 2014.

8. Yuxia Feng, Guipeng Liu, Shaoyan Yang*, Hongyuan Wei, Xianglin Liu, Qinsheng Zhu, and Zhanguo Wang, Interface roughness scattering considering the electrical field fluctuation in undoped AlGaN/GaN heterostructures, Semiconductor Science and Technology, 29, 045015, 2014.

五、联系方式

邮箱：yxfeng@bjut.edu.cn

地址：北京市朝阳区平乐园100号北京工业大学数理楼1段1307。