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文章详情 论文
2012年
2021-09-23 20:54  
  1. characteristics of high-voltage GaN-based light-emitting diodesChin. Phys. B. 2012, 21 (12): 127201 doi: 10.1088/1674-1056/21/12/127201 SCI: 080DMEI20125115811020

  2. Cui Bi-Feng, Guo Wei-Ling, Du Xiao-Dong, Li Jian-Jun, Zou De-Shu, Shen Guang-DiTunnel regenerated coupled multi-active-region large optical cavity laser with high quality beamChin. Phys. B . 2012, 21(9): 094209.SCI007DZEI20123915464023

  3. Ding Yan; Guo Weiling; etal, Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs, Journal of Semiconductors,v 33, n 6, p 066004 (4 pp.), June 2012EI20122915246175

  4. Ding Yan; Guo Weiling; etalFabrication of High-voltage Light Emitting Diodes with a deep Isolation Groove StructureJournal of Semiconductors, v 33, n 9, p 094007 (4 pp.), Sept. 2012EI: 20123915471507

  5. 吴国庆; 郭伟玲; 朱彦旭; 刘建朋; 崔德胜;闫薇薇, 人体模式静电对GaN基蓝光LED载流子运动及其可靠性的影响,发光学报,vol33, No 10, 2012:1132-1137(EI:20124615671129)

  6. 吴国庆; 郭伟玲; 朱彦旭; 刘建朋; 崔德胜;闫薇薇, 驱动电流对大功率白光LED荧光粉转换效率的影响,光电子激光,vol23, No 10, 2012:1869-1875(EI:20124715691563)

  7. Xu Xin-Wei(*)Cui Bi-FengZhu Yan-XuGuo Wei-LingLi Wei-GuoResearch of dielectric photonic crystal on red LED to increase luminous fluxActa Physica Sinica20126115)。0SCI 期刊论文

  8. 李伟国,崔碧峰,郭伟玲,崔德胜,徐昕伟,静电放电对GaN基功率型LED老化特性的影响,光学学报,2012,(08):214-217EI 期刊论文

  9. Cui Bi-Feng(*)Guo Wei-LingDu Xiao-DongLi Jian-JunZou De-ShuShen Guang-DiA tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beamChinese Physics B2012219)。0SCI 期刊论文

  10. 徐昕伟,崔碧峰,朱彦旭,郭伟玲,李伟国,利用介质光子晶体提高红光发光二极管的光通量的研究,Acta Physica Sinica2012,(15):295-299SCI 期刊论文

  11. Ling-yun Ma, Jian-jun Lia, Jia-chun Li, Pei Sun, Jun Deng, Jun Han and Yan-hui Xing. Nanoscale ZnO window layer textured 650nm resonant cavity light emitting diode,OEEM 2012, Key Engineering Materials Vol. 538 (2013) pp 320-323SCI WOS:000316302800077

  12. 郝聪霞, 郭霞, 关宝璐,. Au纳米颗粒的形状和尺寸对表面等离子体的影响. 半导体光电, 2012, 33(4):515-519. (核心期刊:)

  13. 汤益丹, 沈光地, 郭霞,. 带介质分布式Bragg反射镜结构高性能共振腔发光二极管的研究. 物理学报, 2012, 61(1):18503-018503.(SCI:879VB)

  14. 李川川, 关宝璐, 郝聪霞,. 电流主动导引结构倒装AlGaInP LED. 光学学报, 2012, 32(7):242-245 ( EI: 20123715424603 )

  15. 李硕, 关宝璐, 史国柱,. 亚波长光栅调制的偏振稳定垂直腔面发射激光器研究. 物理学报, 2012, 61(18):184208-184208(SCI:047JQ)

  16. Yi-Yang Xie, Qiang Kan, Chen Xu*, Yan-Xu Zhu, Chun-Xia Wang, and Hong-Da Chen“Low Threshold Current Single-Fundamental-Mode Photonic Crystal VCSELs” IEEE Photonics Technology Letters, Vol. 24, No. 6, 2012pp464-466

  17. MaoMingming, Xu Chen*WeiSiming, Xie Yiyang, Liu JiuchengXuKunThe effects of proton implant energy on threshold andoutput power of vertical cavity surface emitting laserActa.Phys. Sin. , Vol.61No.21(2012)214207-1~214207-5

  18. Wei Si-MinXu Chen* Deng JunZhu Yan-XuMao Ming-MingXie Yi-YangXu KunCao TianLiu Jiu-Cheng  Single-Fundamental-Mode 850 nm Surface Relief VCSELChinesePhysics LettersVol. 29, No. 8 (2012) 084208-1-5

  19. F. Liu, C.Xu* , Z.B. Zhao, K. Zhou, Y.Y. Xie, M.M. Mao, S.M. Wei , T. Cao, and G.D. Sheng, “Study on Influence ofOxide Aperture Shape on Modal Characteristics of VCSELs,” vol. 61, no. 5, pp.0542031-6, Acta Phys. Sin. (2012


 


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