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文章详情 论文
2013年
2021-09-23 20:55  
  1. Xu Kun, Xu Chen*,Deng Jun, Zhu Yanxu, Guo Weiling, Mao Mingming, Zheng Lei and Sun Jie, Graphenetransparent electrodes grown by rapid chemical vapor deposition with ultrathinindium tin oxide contact layers for GaN light emitting diodes, AppliedPhysics Letters, Vol.102, 162102(2013),162102-1-5

  2. Xu Kun, Xu Chen*,Xie Yiyang, Deng Jun, Zhu Yanxu, Guo Weiling, Mao Mingming, Xun Meng, ChenMaoxing, Zheng Lei and Sun Jie, GaN nanorodlight emitting diodes with suspended graphene transparent electrodes grown byrapid chemical vapor deposition",AppliedPhysics Letters ,Vol.103, Issue 22,222105-1-5),  (2013)

  3. Ming-Ming Mao, Chen Xu*,Yi-Yang Xie, QiangKan, Meng Xun, Kun Xu, Jun Wang, Hai-Qiang Ren, and Hong-Da Chen,Implant-Defined 3´3 In-PhaseCoherently Coupled Vertical Cavity Surface Emitting Lasers Array,IEEEPhotonics Journal, Vol.5, No. 6, December 2013,1502606

  4. Y.Y. Xie, C. Xu*, Q. Kan, C.X. Wang, and H.D.Chen, “Multi-point defect single-fundamental-mode photonic crystal verticalcavity surface emitting laser” Optics& Laser Technology, 50(2013),130-133

  5. T.Cao, C. Xu*, Y.Y. Xie, Q. Kan, S.M.Wei, M.M. Mao, and H.D. Chen, “VCSEL Transverses Mode and Polarization Controlby Elliptical Holes Photonic Crystal,”Chinese Physics. B, vol. 22, no.2,024205-1-3, 2013

  6. 马钰慧,邱伟彬,苏道军,王加贤,崔碧峰,王晓玲,半导体激光器高反膜系参数的模拟仿真分析,华侨大学学报(然科学版)2013,(06):636-639期刊论文

  7. Wang, HuoleiMi, JunpingZhou, XuliangMeriggi, LauraSteer, MatthewCui, BifengChen, WeixiPan,Jiaoqing(*)Ding, Ying1.06-mu m InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structureOptics Letters20133822):4868-4871SCI 期刊论文Ying DingWei JiJingxiang ChenSong ZhangXiaoling WangHuolei WangHaiqiao NiJiaoqing PanBifeng Cui*Maria Ana Cataluna980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth2013WestR Photonics, American 20132013.02.03-2013.02.07SCI 会议论文

  8. 孙沛,李建军*,邓军,韩军,马凌云,刘涛,(Al0.1Ga0.9)0.5In0.5P材料的MOCVD生长温度窗口研究物理学报,622),2013:026801SCI WOS:000316815000066

  9. Jianjun Li, Tao Liu, Jiachun Li, Xuan YaEffect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting DiodesOptics and Photonics Journal, vol.3, no.2B, 2013: 284-287

  10. 李建军,崔碧峰,邓军,韩军,刘涛,李佳莼,计伟,张松. 非对称超大光腔980nm大功率半导体激光器,中国激光,4011),2013pp.1102011-1-5(EI)

  11. Jiachun Li, Jianjun Li, Tao Liu, Bifeng Cui, Jun Deng, Jun Han, Linjie He, Shengjie Lin,The Study of Relaxation Time in Test of 940 nm Semiconductor LaserJournal of Computer and Communications, , 1, 2013: 46-49

  12. Tao Liu, Jianjun Li, Jiachun Li, Jun Han, Jun Deng, Linjie He, Shengjie Lin,Study on the Luminescence Properties of the Strain Compensated Quantum Well Journal of Computer and Communications, 1, 2013:40-45

  13. Ke Liu, Hui Huang, Six-Xuan Mu, Hai Lin, and Duncan L. MacFarlane, Ultra-compact three-port trench-based photonic couplers in ion-exchanged glass waveguides, Optics Communications, 2013, 309: 307-312. DOI: 10.1016/j.optcom.2013.07.077 (SCI: 273IF)

  14. Ke Liu, Si-Xuan Mu, Yu Lu, Bao-Lu Guan, and Edwin Y.B. Pun, L-band wavelength-tunable MQW Fabry-Perot laser using a three-segment structure, IEEE Photonics Technology Letters, 2013, 25 (18): 1754-1757. DOI: 10.1109/LPT.2013.2273367 (SCI: 208JB)

  15. 郭伟玲樊星;崔德胜等,一种基于伪失效寿命的LED可靠性快速评价方法,发光学报,vol34, No 2, 2013:1132-1137,(EI20131116114529

  16. 郭伟玲俞鑫;刘建朋,具有电流阻挡层的不同GaNLED的光电特性(英文),发光学报,vol34, No 7, 2013:918-923EI20133216588109

  17. Liu K, Mu S X, Lu Y, et al. L-Band Wavelength-Tunable MQW Fabry–Pérot Laser Using a Three-Segment Structure[J]. IEEE Photonics Technology Letters, 2013, 25(18):1754-1757 DOI: 10.1109/LPT.2013.2273367(SCI:208JB)

  18. 史国柱, 关宝路, 李硕, et al. Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers[J]. Chinese Physics B, 2013, 22(1):257-262 DOI: 3.1049/el:20070195 (SCI:088DY)

  19. 王强, 关宝璐, 刘克,. 表面液晶-垂直腔面发射激光器温度特性的研究[J]. 物理学报, 2013, 62(23):234206-234206.(SCI:279AQ)

 


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